United States Gallium Nitride (GaN) Power Devices Market Technology Insights, Trends, Sales and Forecast 2018-2025

The Latest Research Report ā€œUnited States Gallium Nitride (GaN) Power Devices Market Technology Insights, Trends, Sales and Forecast 2018-2025ā€ provides information on pricing, market analysis, shares, forecast, and company profiles for key industry participants. - MarketResearchReports.biz

In this report, the United States Gallium Nitride (GaN) Power Devices market is valued at USD XX million in 2017 and is expected to reach USD XX million by the end of 2025, growing at a CAGR of XX% between 2017 and 2025.

Geographically, this report splits the United States market into seven regions:
The West
The Middle Atlantic
New England
The South
The Midwest
with sales (volume), revenue (value), market share and growth rate of Gallium Nitride (GaN) Power Devices in these regions, from 2013 to 2025 (forecast).

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United States Gallium Nitride (GaN) Power Devices market competition by top manufacturers/players, with Gallium Nitride (GaN) Power Devices sales volume, price, revenue (Million USD) and market share for each manufacturer/player; the top players including
Transphorm Inc
Fujitsu Limited
NXP Semiconductors N.V.
GaN Systems Inc
Texas Instruments
Infineon Technologies AG
Cree Incorporated (Wolfspeed)
OSRAM Opto Semiconductors GmbH
Qorvo, Inc

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On the basis of product, this report displays the production, revenue, price, market share and growth rate of each type, primarily split into
GaN Power Discrete Devices
GaN Power ICs
GaN Power Modules
On the basis on the end users/applications, this report focuses on the status and outlook for major applications/end users, sales volume, market share and growth rate for each application, including
Consumer Electronics
IT & Telecommunications
Aerospace & Defense

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